
Our HSQ negative resist, H-SiQ, is formulated for high-resolution electron beam lithography applications. We use hydrogen silsesquioxane resin in a semiconductor-grade MIBK carrier solvent to create a negative-tone resist for direct-write thin-film EBL. H-SiQ combines excellent pitch resolution, sensitivity, and etch resistance for demanding fabrication processes. We offer different concentrations, allowing customers to select a formulation that aligns with their desired film thickness and specific lithography requirements.
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